Quantitative depth profiling of Si1–xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry
نویسندگان
چکیده
منابع مشابه
Quantitative Secondary Ion Mass Spectrometry
mental standards, and by statistical and systematic errors in the measurement of x-ray lines and in the separation of line intensity from spectral background. The errors in estimating the characteristics of the detector system, with exception of deadtime effects, cancel when the emission from the specimen is divided by that from the standard. The estimate of achievable accuracy of EPMA and the ...
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ژورنال
عنوان ژورنال: Thin Solid Films
سال: 2016
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2016.03.049